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|Title:||In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching||Authors:||Kok, K.W.
|Issue Date:||Jan-2002||Citation:||Kok, K.W., Yoo, W.J., Sooriakumar, K. (2002-01). In situ trench etching and releasing technique of high aspect ratio beams using magnetically enhanced reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 154-158. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1431961||Abstract:||An in situ trench etching and releasing technique were studied to fabricate high aspect-ratio beams using magnetically enhanced reactive ion etching (MERIE) method. The dependency of MERIE etching rates on open ratio and pattern size was also discussed for high aspect-ratio microelectromechanical systems (MEMS) structures. The results showed that the MERIE etching rates of Si substrate were insensitive to the open ratio in the range from 10% to 50% as compared to inductively coupled plasma etching.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/70574||ISSN:||10711023||DOI:||10.1116/1.1431961|
|Appears in Collections:||Staff Publications|
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