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|Title:||Impact of metal dummy fills on the performance of CMOS inductors||Authors:||Nan, L.
|Issue Date:||2007||Citation:||Nan, L.,Mouthaan, K.,Xiong, Y.-Z.,Shi, J.,Rustagi, S.C.,Ooi, B.-L. (2007). Impact of metal dummy fills on the performance of CMOS inductors. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 : 251-254. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2007.4450109||Abstract:||To meet the metal density and uniformity requirement, metal dummy fills are inserted on all metallization layers in modern CMOS technologies. These metal dummy fills can have a detrimental effect on the performance of IC components. In this paper, the impact of metal dummy fills on the equivalent circuit and the performance of on-chip spiral inductors is presented based on experimental data. A simple closed-form formula is further provided to account for the effect of metal dummy fills to update the model for inductors in the conventional environment without metal dummy fills. © 2007 IEEE.||Source Title:||IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007||URI:||http://scholarbank.nus.edu.sg/handle/10635/70536||ISBN:||1424406374||DOI:||10.1109/EDSSC.2007.4450109|
|Appears in Collections:||Staff Publications|
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