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Title: | Impact of buried capping layer on TDDB physics of advanced interconnects | Authors: | Yiang, K.Y. Yoo, W.J. Krishnamoorthy, A. Tang, L.J. |
Keywords: | Buried capping layer Interconnects Low-k Reliability Time-dependent dielectric breakdown |
Issue Date: | 2005 | Citation: | Yiang, K.Y.,Yoo, W.J.,Krishnamoorthy, A.,Tang, L.J. (2005). Impact of buried capping layer on TDDB physics of advanced interconnects. IEEE International Reliability Physics Symposium Proceedings : 490-494. ScholarBank@NUS Repository. | Abstract: | In Cu/SiOC interconnects, the incorporation of a thin (100-Å) buried capping layer (BCL) extends the lifetime beyond 10 years when extrapolated to the operating conditions of 105°C and 0.5 MV/cm. A thicker (800-Å) BCL, however, initiates Ta barrier rupture due to thermomechanical stress and degrades lifetime performance. For the first time, three distinctively different failure mechanisms of structures with and without BCL are identified: Cu drift into the bulk SiOC, along the capping layer/SiOC interface and through the ruptured Ta barrier into the BCL. We demonstrate that BCL engineering is a realizable and potentially promising technique to improve the electrical reliability of advanced interconnects. © 2005 IEEE. | Source Title: | IEEE International Reliability Physics Symposium Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/70533 | ISBN: | 0780388038 | ISSN: | 15417026 |
Appears in Collections: | Staff Publications |
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