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|Title:||Impact of buried capping layer on TDDB physics of advanced interconnects||Authors:||Yiang, K.Y.
|Keywords:||Buried capping layer
Time-dependent dielectric breakdown
|Issue Date:||2005||Citation:||Yiang, K.Y.,Yoo, W.J.,Krishnamoorthy, A.,Tang, L.J. (2005). Impact of buried capping layer on TDDB physics of advanced interconnects. IEEE International Reliability Physics Symposium Proceedings : 490-494. ScholarBank@NUS Repository.||Abstract:||In Cu/SiOC interconnects, the incorporation of a thin (100-Å) buried capping layer (BCL) extends the lifetime beyond 10 years when extrapolated to the operating conditions of 105°C and 0.5 MV/cm. A thicker (800-Å) BCL, however, initiates Ta barrier rupture due to thermomechanical stress and degrades lifetime performance. For the first time, three distinctively different failure mechanisms of structures with and without BCL are identified: Cu drift into the bulk SiOC, along the capping layer/SiOC interface and through the ruptured Ta barrier into the BCL. We demonstrate that BCL engineering is a realizable and potentially promising technique to improve the electrical reliability of advanced interconnects. © 2005 IEEE.||Source Title:||IEEE International Reliability Physics Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/70533||ISBN:||0780388038||ISSN:||15417026|
|Appears in Collections:||Staff Publications|
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