1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2010.5667643
DC FieldValue
dc.titleIII-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorChin, H.-C.
dc.contributor.authorGong, X.
dc.contributor.authorGuo, H.
dc.contributor.authorZhang, X.
dc.date.accessioned2014-06-19T03:13:03Z
dc.date.available2014-06-19T03:13:03Z
dc.date.issued2010
dc.identifier.citationYeo, Y.-C.,Chin, H.-C.,Gong, X.,Guo, H.,Zhang, X. (2010). III-V MOSFETs: Surface passivation for gate stack, source/drain and channel strain engineering, self-aligned contact metallization. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1298-1301. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2010.5667643" target="_blank">https://doi.org/10.1109/ICSICT.2010.5667643</a>
dc.identifier.isbn9781424457984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70520
dc.description.abstractIn this paper, we discuss the research and development of several key process modules for realizing high-mobility III-V n-MOSFETs. Interface passivation technologies were developed to realize high quality gate stacks on III-V. InGaAs MOSFETs with in situ doped lattice-mismatched source/drain (S/D) stressors were demonstrated for reduction of S/D series resistance as well as channel strain engineering. InGaAs FETs with high-stress liner stressor were also realized. A CMOS-compatible salicide-like process was developed for self-aligned contact metallization. We also explore the integration of III-V on Si platform for potential device integration. ©2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICSICT.2010.5667643
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ICSICT.2010.5667643
dc.description.sourcetitleICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
dc.description.page1298-1301
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.