Please use this identifier to cite or link to this item:
Title: III-V MOSFETs with a new self-aligned contact
Authors: Zhang, X.
Guo, H.
Ko, C.-H.
Wann, C.H.
Cheng, C.-C.
Lin, H.-Y.
Chin, H.-C.
Gong, X.
Lim, P.S.Y.
Luo, G.-L.
Chang, C.-Y.
Chien, C.-H.
Han, Z.-Y.
Huang, S.-C.
Yeo., Y.-C. 
Issue Date: 2010
Citation: Zhang, X.,Guo, H.,Ko, C.-H.,Wann, C.H.,Cheng, C.-C.,Lin, H.-Y.,Chin, H.-C.,Gong, X.,Lim, P.S.Y.,Luo, G.-L.,Chang, C.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Yeo., Y.-C. (2010). III-V MOSFETs with a new self-aligned contact. Digest of Technical Papers - Symposium on VLSI Technology : 233-234. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized. © 2010 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
ISBN: 9781424476374
ISSN: 07431562
DOI: 10.1109/VLSIT.2010.5556240
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jun 3, 2023

Page view(s)

checked on May 25, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.