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|Title:||III-V MOSFETs with a new self-aligned contact||Authors:||Zhang, X.
|Issue Date:||2010||Citation:||Zhang, X.,Guo, H.,Ko, C.-H.,Wann, C.H.,Cheng, C.-C.,Lin, H.-Y.,Chin, H.-C.,Gong, X.,Lim, P.S.Y.,Luo, G.-L.,Chang, C.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Yeo., Y.-C. (2010). III-V MOSFETs with a new self-aligned contact. Digest of Technical Papers - Symposium on VLSI Technology : 233-234. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2010.5556240||Abstract:||We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized. © 2010 IEEE.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/70519||ISBN:||9781424476374||ISSN:||07431562||DOI:||10.1109/VLSIT.2010.5556240|
|Appears in Collections:||Staff Publications|
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