Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2002.802686
DC FieldValue
dc.titleFlux-enhanced giant magnetoresistive head design and simulation
dc.contributor.authorZheng, Y.K.
dc.contributor.authorYou, D.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-06-19T03:11:08Z
dc.date.available2014-06-19T03:11:08Z
dc.date.issued2002-09
dc.identifier.citationZheng, Y.K., You, D., Wu, Y.H. (2002-09). Flux-enhanced giant magnetoresistive head design and simulation. IEEE Transactions on Magnetics 38 (5 I) : 2268-2270. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2002.802686
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70350
dc.description.abstractThe possibility of introducing a back flux-guide to increase the efficiency of a shielded giant magnetoresistive (GMR) head was studied. The flux-guide instead of the air effectively increases flux at the top of the GMR element, which leads to an increase of GMR head's sensitivity. The flux distribution was calculated by a two-dimensional (2-D) finite element method. In the simulation, the shield to shield spacing, free layer thickness, and GMR element height are assumed to be 90 nm, 4 nm, and 100 nm, respectively. Parameters such as permeability, thickness and height of flux-guides and spacing between the GMR element and flux-guides have been taken into account. The detailed magnetization distribution is simulated using a three-dimensional (3-D) micromagnetic modeling. A back flux-guide with permeability of more than 100, thickness of more than 10 nm, as well as short spacing between the element and flux-guide enhances the sensor's sensitivity. After optimization, the sensitivity of flux-enhanced magnetic tunnel junctions (MTJ) GMR head can be 40% higher than that of the conventional MTJ GMR head.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2002.802686
dc.sourceScopus
dc.subjectFlux-guide
dc.subjectGiant magnetoresistive head
dc.subjectMagnetic tunnel junctions
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMAG.2002.802686
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume38
dc.description.issue5 I
dc.description.page2268-2270
dc.description.codenIEMGA
dc.identifier.isiut000178867200130
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