Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70348
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dc.titleFlux-closed MRAM with ultra-low switching current
dc.contributor.authorZheng, Y.K.
dc.contributor.authorLi, K.B.
dc.contributor.authorQiu, J.J.
dc.contributor.authorAn, L.H.
dc.contributor.authorLuo, P.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorHan, G.C.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-06-19T03:11:07Z
dc.date.available2014-06-19T03:11:07Z
dc.date.issued2005
dc.identifier.citationZheng, Y.K.,Li, K.B.,Qiu, J.J.,An, L.H.,Luo, P.,Guo, Z.B.,Han, G.C.,Wu, Y.H. (2005). Flux-closed MRAM with ultra-low switching current. INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference : 424-. ScholarBank@NUS Repository.
dc.identifier.isbn0780390091
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70348
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
dc.description.page424-
dc.identifier.isiutNOT_IN_WOS
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