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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPGC.2008.4781311
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dc.titleEffect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells
dc.contributor.authorDixit, V.
dc.contributor.authorLiu, H.F.
dc.contributor.authorXiang, N.
dc.date.accessioned2014-06-19T03:08:01Z
dc.date.available2014-06-19T03:08:01Z
dc.date.issued2008
dc.identifier.citationDixit, V.,Liu, H.F.,Xiang, N. (2008). Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells. 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPGC.2008.4781311" target="_blank">https://doi.org/10.1109/IPGC.2008.4781311</a>
dc.identifier.isbn9781424429059
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70082
dc.description.abstractA kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPGC.2008.4781311
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IPGC.2008.4781311
dc.description.sourcetitle2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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