Please use this identifier to cite or link to this item:
|Title:||Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells||Authors:||Dixit, V.
|Issue Date:||2008||Citation:||Dixit, V.,Liu, H.F.,Xiang, N. (2008). Effect of nitrogen on indium segregation in GaInNAs/GaAs quantum wells. 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPGC.2008.4781311||Abstract:||A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.||Source Title:||2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008||URI:||http://scholarbank.nus.edu.sg/handle/10635/70082||ISBN:||9781424429059||DOI:||10.1109/IPGC.2008.4781311|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 28, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.