Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1865114
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dc.titleEffect of electric field on chemical bonds of carbon-doped silicon oxide as evidenced by in situ Fourier transform infrared spectroscopy
dc.contributor.authorYiang, K.Y.
dc.contributor.authorYoo, W.J.
dc.contributor.authorKrishnamoorthy, A.
dc.date.accessioned2014-06-19T03:07:55Z
dc.date.available2014-06-19T03:07:55Z
dc.date.issued2005
dc.identifier.citationYiang, K.Y., Yoo, W.J., Krishnamoorthy, A. (2005). Effect of electric field on chemical bonds of carbon-doped silicon oxide as evidenced by in situ Fourier transform infrared spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (2) : 433-436. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1865114
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70073
dc.description.abstractIn this study, we use in situ Fourier transform infrared (FTIR) spectroscopy on a carbon-doped silicon oxide (SiOCH) to determine the origins of its lower breakdown strength (compared to Si O2) and the precursors of dielectric breakdown. While subjecting the SiOCH film to externally applied electric fields, the FTIR spectra are recorded. Changes in peak area ratios and intensities are determined and correlated to field-induced perturbation of chemical bonds in SiOCH. This is a potentially powerful technique which provides new insights into the dielectric degradation and breakdown phenomena. © 2005 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1865114
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1865114
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume23
dc.description.issue2
dc.description.page433-436
dc.description.codenJVTBD
dc.identifier.isiut000228788600015
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