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|Title:||Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV||Authors:||Hong, Y.D.
|Issue Date:||2004||Citation:||Hong, Y.D.,Yan, J.,Wong, K.M.,Yeow, Y.T.,Chim, W.K. (2004). Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 954-957. ScholarBank@NUS Repository.||Abstract:||Scanning capacitance microscopy (SCM) has proven to he successful for junction delineation. However quantitative dopant profile extraction by SCM still remains a difficult challenge, due to limited understanding of relevant physics especially at p-n junction, as well as difficulties to accurately quantify all parameters in modeling. In this paper we present a new procedure, the use of peak dC/dV at every spatial point, for dopant profile extraction. The advantage of such a technique is twofold. First it eliminates problems encountered using a fixed dc bias such as contrast reversal. Second, it also excludes the need to model interface traps. This is because the peak dC/dV value is independent of the presence of interface traps, as demonstrated in our experimental results. Furthermore, based on our understanding of the influence of mobility degradation at p-n junction, we propose that low surface mobility model should be used in simulation so that only the accumulation-to-depletion dC/dV is extracted. © 2004 IEEE.||Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT||URI:||http://scholarbank.nus.edu.sg/handle/10635/70006|
|Appears in Collections:||Staff Publications|
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