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|Title:||Determination of the local electric field strength near electric breakdown||Authors:||Geinzer, T.
|Issue Date:||2010||Citation:||Geinzer, T.,Heiderhoff, R.,Phang, J.C.H.,Balk, L.J. (2010). Determination of the local electric field strength near electric breakdown. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2010.5531989||Abstract:||For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail. © 2010 IEEE.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/69898||ISBN:||9781424455973||DOI:||10.1109/IPFA.2010.5531989|
|Appears in Collections:||Staff Publications|
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