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|Title:||Design of metal-semiconductor-metal ultra-violet detector on Gallium nitride||Authors:||Wenhua, G.
|Issue Date:||2001||Citation:||Wenhua, G.,Soo, J.C.,Zhang, X.H. (2001). Design of metal-semiconductor-metal ultra-violet detector on Gallium nitride. Materials Research Society Symposium Proceedings 680 : 280-284. ScholarBank@NUS Repository.||Abstract:||The design of Gallium Nitride based Metal-Semiconductor-Metal Ultra-Violet detector is discussed. We introduce a simulation model using Medici to describe the performances of such detectors. Structure parameters, such as the inter-digitated electrode dimension and the GaN layer thickness, are optimized for response current and time using this model. The simulation results can be explained by the variation of depletion region. We introduce the "effective electric field intensity" to describe the depletion region. The relationship between the "effective electric field intensity" and structure parameters are simulated and discussed. © 2001 Materials Research Society.||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/69866||ISBN:||1558996168||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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