Please use this identifier to cite or link to this item: https://doi.org/10.1166/nnl.2011.1160
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dc.titleDesign and characterization of microelectromechanical system flow sensors using silicon nanowires
dc.contributor.authorLou, L.
dc.contributor.authorLee, C.
dc.contributor.authorXu, X.
dc.contributor.authorKotlanka, R.K.
dc.contributor.authorShao, L.
dc.contributor.authorPark, W.-T.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-06-19T03:05:04Z
dc.date.available2014-06-19T03:05:04Z
dc.date.issued2011-04
dc.identifier.citationLou, L., Lee, C., Xu, X., Kotlanka, R.K., Shao, L., Park, W.-T., Kwong, D.L. (2011-04). Design and characterization of microelectromechanical system flow sensors using silicon nanowires. Nanoscience and Nanotechnology Letters 3 (2) : 230-234. ScholarBank@NUS Repository. https://doi.org/10.1166/nnl.2011.1160
dc.identifier.issn19414900
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69821
dc.description.abstractCantilever structures were reported to be used for flow sensing purposes. Herein, we present silicon nanowire (SiNW) based cantilever flow sensor. Five cantilever flow sensors with different depths are modeled and simulated (fluid-structure) with water flow velocity from 50 cm/s to 200 cm/s. SiNW is embedded in the cantilever as piezoresistive transducer at the anchor, and a maximum resistance change of 11.2% is obtained. Based on the results, increasing depth will not only contributes to larger cantilever deformation at fixed flow velocity, but also improves its sensitivity. However when the depth become larger to certain degree, this effect tends to saturate. Copyright © 2011 American Scientific Publishers.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/nnl.2011.1160
dc.sourceScopus
dc.subjectFlow sensor
dc.subjectMEMS
dc.subjectSilicon nanowire
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1166/nnl.2011.1160
dc.description.sourcetitleNanoscience and Nanotechnology Letters
dc.description.volume3
dc.description.issue2
dc.description.page230-234
dc.identifier.isiut000293211300023
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