Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69753
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dc.titleCorrelation of flash memory defects detected with passive and active localization techniques
dc.contributor.authorQuah, A.C.T.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorLi, S.
dc.contributor.authorMassoodi, M.
dc.contributor.authorYuan, C.
dc.contributor.authorKoh, L.S.
dc.contributor.authorChan, K.H.
dc.contributor.authorChua, C.M.
dc.date.accessioned2014-06-19T03:04:17Z
dc.date.available2014-06-19T03:04:17Z
dc.date.issued2004
dc.identifier.citationQuah, A.C.T.,Phang, J.C.H.,Li, S.,Massoodi, M.,Yuan, C.,Koh, L.S.,Chan, K.H.,Chua, C.M. (2004). Correlation of flash memory defects detected with passive and active localization techniques. Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004 : 604-608. ScholarBank@NUS Repository.
dc.identifier.isbn0871708078
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69753
dc.description.abstractThe correlation of flash memory defects detected with passive and active localization techniques is discussed. There are three types of defects such as Type 1 defects, Type 2 defects and Type 3 defects. Type 1 defects are those that are detected by both techniques while Type 2 defects are existing leakage defects which are not sensitive to thermal stimulation and can only be detected with photon emission microscopy (PEM). Type 3 defects are reliability defects that are sensitive to thermal stimulation and are only detectable with laser induced techniques. The results show that a combination of PEM and laser induced techniques can distinguish existing leakage and temperature sensitive defects.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004
dc.description.page604-608
dc.identifier.isiutNOT_IN_WOS
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