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|Title:||Correlation of flash memory defects detected with passive and active localization techniques||Authors:||Quah, A.C.T.
|Issue Date:||2004||Citation:||Quah, A.C.T.,Phang, J.C.H.,Li, S.,Massoodi, M.,Yuan, C.,Koh, L.S.,Chan, K.H.,Chua, C.M. (2004). Correlation of flash memory defects detected with passive and active localization techniques. Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004 : 604-608. ScholarBank@NUS Repository.||Abstract:||The correlation of flash memory defects detected with passive and active localization techniques is discussed. There are three types of defects such as Type 1 defects, Type 2 defects and Type 3 defects. Type 1 defects are those that are detected by both techniques while Type 2 defects are existing leakage defects which are not sensitive to thermal stimulation and can only be detected with photon emission microscopy (PEM). Type 3 defects are reliability defects that are sensitive to thermal stimulation and are only detectable with laser induced techniques. The results show that a combination of PEM and laser induced techniques can distinguish existing leakage and temperature sensitive defects.||Source Title:||Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004||URI:||http://scholarbank.nus.edu.sg/handle/10635/69753||ISBN:||0871708078|
|Appears in Collections:||Staff Publications|
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