Please use this identifier to cite or link to this item:
|Title:||Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices||Authors:||Chew, H.G.
Hafnium aluminum oxide
|Issue Date:||Feb-2009||Citation:||Chew, H.G., Zheng, F., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Foo, Y.L. (2009-02). Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices. Journal of Nanoscience and Nanotechnology 9 (2) : 1577-1581. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2009.C206||Abstract:||Growth of germanium (Ge) nanocrystals in silicon (Si) oxide and hafnium aluminum oxide (HfAlO) is examined. In Si oxide, nanocrystals were able to form at annealing temperatures of 800 °C to 1000 °C. Nanocrystals formed at 800 °C were round and ~8 nm in diameter, at 900 °C they become facetted and at 1000 °C they become spherical again. In HfAIO, at 800 °C nanocrystals formed are relatively smaller (~3 nm in diameter) and lower in density. While at 900 °C and 1000 °C, nanocrystals did not form due to out-diffusion of Ge. Different nanocrystal formation characteristics in the matrices are attributed to differences in their crystallization temperatures.Copyright © 2009 American Scientific Publishers All rights reserved.||Source Title:||Journal of Nanoscience and Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/69654||ISSN:||15334880||DOI:||10.1166/jnn.2009.C206|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.