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Title: Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices
Authors: Chew, H.G.
Zheng, F.
Choi, W.K. 
Chim, W.K. 
Fitzgerald, E.A.
Foo, Y.L.
Keywords: Ge out-diffusion
Germanium nanocrystals
Hafnium aluminum oxide
Issue Date: Feb-2009
Citation: Chew, H.G., Zheng, F., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Foo, Y.L. (2009-02). Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices. Journal of Nanoscience and Nanotechnology 9 (2) : 1577-1581. ScholarBank@NUS Repository.
Abstract: Growth of germanium (Ge) nanocrystals in silicon (Si) oxide and hafnium aluminum oxide (HfAlO) is examined. In Si oxide, nanocrystals were able to form at annealing temperatures of 800 °C to 1000 °C. Nanocrystals formed at 800 °C were round and ~8 nm in diameter, at 900 °C they become facetted and at 1000 °C they become spherical again. In HfAIO, at 800 °C nanocrystals formed are relatively smaller (~3 nm in diameter) and lower in density. While at 900 °C and 1000 °C, nanocrystals did not form due to out-diffusion of Ge. Different nanocrystal formation characteristics in the matrices are attributed to differences in their crystallization temperatures.Copyright © 2009 American Scientific Publishers All rights reserved.
Source Title: Journal of Nanoscience and Nanotechnology
ISSN: 15334880
DOI: 10.1166/jnn.2009.C206
Appears in Collections:Staff Publications

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