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|Title:||Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching||Authors:||Vajpeyi, A.P.
|Issue Date:||2005||Citation:||Vajpeyi, A.P.,Tripathy, S.,Chua, S.J.,Arokiaraj, J.,Fitzgerald, E.A. (2005). Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching. Proceedings - Electrochemical Society PV 2005-04 : 196-207. ScholarBank@NUS Repository.||Abstract:||In this study, nanoporous GaN films are prepared by UV-assisted electrochemical and electroless etching using HF-based electrolytes. Optical quality and morphology of these nanoporous films have been studied using micro-photoluminescence, micro-Raman scattering, and scanning electron microscopy (SEM). For nanoporous GaN films prepared by UV-assisted electrochemical etching, SEM measurements reveal an average pore size of about 85-90 nm with an average transverse dimension of 70-75 nm, whereas in the case of UV-assisted electroless etching, average pore size is about 55-60 nm with a pore depth of 0.5 μm. As compared to the starting as-grown GaN film, porous layers exhibit a substantial photoluminescence (PL) intensity enhancement with a relaxation of compressive stress. The red shifted EI phonon peak in the Raman spectra of the porous GaN films further confirms such a stress relaxation. Micro-Raman and micro-PL measurements also suggest that light extraction from such porous GaN surface is enhanced by nanopatterning.||Source Title:||Proceedings - Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/69649|
|Appears in Collections:||Staff Publications|
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