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|Title:||Characterization of MOS transistors using dynamic backside reflectance modulation technique||Authors:||Teo, J.K.J.
|Issue Date:||2011||Citation:||Teo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H. (2011). Characterization of MOS transistors using dynamic backside reflectance modulation technique. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 170-175. ScholarBank@NUS Repository.||Abstract:||The channel of metal-oxide-semiconductor (MOS) transistors at different modes of operation has been characterized using dynamic backside laser reflectance modulation technique for different NMOS and PMOS transistors with different channel lengths. The reflectance modulations contain a primary peak near the drain-end when the MOS transistor is in saturation mode. Comparison studies with a Pseudo-Two-Dimensional analytical model support the hypothesis that the observed peak corresponds to the pinch-off point. Copyright © 2011 ASM International®. All rights reserved.||Source Title:||Conference Proceedings from the International Symposium for Testing and Failure Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/69589||ISBN:||9781615038268|
|Appears in Collections:||Staff Publications|
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