Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/69588
DC FieldValue
dc.titleCharacterization of MOS Devices by Scanning Thermal Microscopy (SThM)
dc.contributor.authorLee, T.H.
dc.contributor.authorFiege, G.B.M.
dc.contributor.authorAltes, A.
dc.contributor.authorZimmermann, G.
dc.contributor.authorNg, V.
dc.contributor.authorHeiderhoff, R.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorBalk, L.J.
dc.date.accessioned2014-06-19T03:02:22Z
dc.date.available2014-06-19T03:02:22Z
dc.date.issued2001
dc.identifier.citationLee, T.H.,Fiege, G.B.M.,Altes, A.,Zimmermann, G.,Ng, V.,Heiderhoff, R.,Phang, J.C.H.,Balk, L.J. (2001). Characterization of MOS Devices by Scanning Thermal Microscopy (SThM). Conference Proceedings from the International Symposium for Testing and Failure Analysis : 191-197. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69588
dc.description.abstractTemperature measurements on passivated electronic devices and the determination of the local thermal conductivity using the Scanning Thermal Microscope demonstrate promising possibilities to use this system as a tool for thermal diagnostics as well as for the failure analysis. Since doping concentration affects the thermal conductivity (κ) due to the free carriers introduced, we propose the SThM as a potential dopant-profiling tool. To correlate doping concentration and thermal conductivity, we have mapped out the thermal conductivity of decreasing Boron-doped and Phosphorus-doped staircase silicon substrates and compared these data to the corresponding doping profile from 1D Secondary ion mass spectroscopy (SIMS). To demonstrate the ability of the SThM technique to analyze both thermal features - temperature distribution and quantitative thermal conductivity - of an electronic device, we investigated properties of an NMOS device.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleConference Proceedings from the International Symposium for Testing and Failure Analysis
dc.description.page191-197
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

63
checked on May 11, 2019

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.