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|Title:||Characterization of interconnect defects using scanning thermal conductivity microscopy||Authors:||Ho, H.W.
|Issue Date:||2004||Citation:||Ho, H.W.,Phang, J.C.H.,Altes, A.,Balk, L.J. (2004). Characterization of interconnect defects using scanning thermal conductivity microscopy. Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004 : 363-368. ScholarBank@NUS Repository.||Abstract:||In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.||Source Title:||Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004||URI:||http://scholarbank.nus.edu.sg/handle/10635/69587||ISBN:||0871708078|
|Appears in Collections:||Staff Publications|
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