Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique

Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2011.6185850

Title:	Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique
Authors:	Meng, L. Steen, S. Koo, C.K. Bhatia, C.S. Street, A.G. Joshi, P. Kim, Y.H. Phang, J.C.H.
Issue Date:	2011
Citation:	Meng, L.,Steen, S.,Koo, C.K.,Bhatia, C.S.,Street, A.G.,Joshi, P.,Kim, Y.H.,Phang, J.C.H. (2011). Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique. Conference Record of the IEEE Photovoltaic Specialists Conference : 000079-000084. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2011.6185850
Abstract:	Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction. © 2011 IEEE.
Source Title:	Conference Record of the IEEE Photovoltaic Specialists Conference
URI:	http://scholarbank.nus.edu.sg/handle/10635/69586
ISBN:	9781424499656
ISSN:	01608371
DOI:	10.1109/PVSC.2011.6185850
Appears in Collections:	Staff Publications

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