Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDERC.2007.4430903
DC FieldValue
dc.titleCharacterization and modeling of CMOS on-chip coupled interconnects
dc.contributor.authorKumar, R.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorKang, K.
dc.contributor.authorMouthaan, K.
dc.contributor.authorWong, T.K.S.
dc.date.accessioned2014-06-19T03:02:19Z
dc.date.available2014-06-19T03:02:19Z
dc.date.issued2008
dc.identifier.citationKumar, R., Rustagi, S.C., Kang, K., Mouthaan, K., Wong, T.K.S. (2008). Characterization and modeling of CMOS on-chip coupled interconnects. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 159-162. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430903
dc.identifier.isbn1424411238
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69583
dc.description.abstractIn this paper, an S-parameter measurement based modeling methodology is proposed for characterization of coupled interconnects on silicon substrate. First, a set of single transmission lines in ground-signal-ground configuration is measured and modeled as multiple Γ-sections. A pair of coupled lines is then modeled as two single lines interconnected by coupling capacitance, mutual inductance and mutual resistance. Asymptotic techniques and closed-form analytical expressions are used to determine the initial guesses for optimization of the model parameters of single and coupled lines. It is found that in extending the single line model to the coupled lines, only a couple of model parameters need to change due to the proximity effect. Further, the time-domain crosstalk is measured for Cu/oxide and Cu/Ultra low-κ interconnects and analyzed using the proposed model. Good agreement is found between the simulated and measured results in both the frequency and the time domains for different lengths, widths and spacing (for coupled-lines) confirming the accuracy of the modeling methodology. The compact modeling approach presented here facilitates accurate characterization and modeling of coupled interconnects based on measured S-parameters data. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDERC.2007.4430903
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDERC.2007.4430903
dc.description.sourcetitleESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
dc.description.page159-162
dc.identifier.isiut000252831900031
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

2
checked on Dec 6, 2021

Page view(s)

96
checked on Dec 2, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.