Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734614
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dc.titleCharacteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides
dc.contributor.authorLiu, W.J.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorLuo, Y.
dc.contributor.authorJiao, G.F.
dc.contributor.authorHuang, X.Y.
dc.contributor.authorHuang, D.
dc.contributor.authorLiao, C.C.
dc.contributor.authorZhang, L.F.
dc.contributor.authorGan, Z.H.
dc.contributor.authorWong, W.
dc.contributor.authorLi, M.-F.
dc.date.accessioned2014-06-19T03:02:18Z
dc.date.available2014-06-19T03:02:18Z
dc.date.issued2008
dc.identifier.citationLiu, W.J., Liu, Z.Y., Luo, Y., Jiao, G.F., Huang, X.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2008). Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 648-650. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734614
dc.identifier.isbn9781424421855
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69581
dc.description.abstractNegative bias temperature instability in pMOSFETs with thermally and plasma nitrided oxides is investigated using quasi-DC Id-Vg (slow Id-Vg) and on-the-fiy interface trap (OFIT) measurement methods. By comparing the OFIT results with those observed from Id-Vg measurements, we found that the threshold voltage shift measured by slow Id-Vg is mainly due to the interface trap since the oxide charge is essentially detrapped during the measurement delay. Quantitatively, the interface trap density measured by OFIT method is higher than that by slow Id-Vg measurement, since the latter measurement is subjected to the recovery effect. For the thermally and plasma nitrided oxides, we found the interface trap density is higher for thermally nitride oxide. However, the power law time exponent n as stress time is the same for the pMOSFETs with both processes. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICSICT.2008.4734614
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ICSICT.2008.4734614
dc.description.sourcetitleInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
dc.description.page648-650
dc.identifier.isiut000265971001006
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