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|Title:||Backside reflectance modulation of microscale metal interconnects||Authors:||Teo, J.K.J.
|Issue Date:||2011||Citation:||Teo, J.K.J.,Chua, C.M.,Koh, L.S.,Phang, J.C.H. (2011). Backside reflectance modulation of microscale metal interconnects. IEEE International Reliability Physics Symposium Proceedings : FA.4.1-FA.4.6. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2011.5784577||Abstract:||The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulation is observed with temperature increase which is one to two orders of magnitude higher than published results. A backside reflectance model is developed to explain the experimental results. © 2011 IEEE.||Source Title:||IEEE International Reliability Physics Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/69489||ISBN:||9781424491117||ISSN:||15417026||DOI:||10.1109/IRPS.2011.5784577|
|Appears in Collections:||Staff Publications|
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