Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2010.2045478
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dc.titleAchieving highly localized effective magnetic fields with non-uniform rashba spin-orbit coupling for tunable spin current in metal/semiconductor/metal structures
dc.contributor.authorFujita, T.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-19T02:57:23Z
dc.date.available2014-06-19T02:57:23Z
dc.date.issued2010-06
dc.identifier.citationFujita, T., Jalil, M.B.A., Tan, S.G. (2010-06). Achieving highly localized effective magnetic fields with non-uniform rashba spin-orbit coupling for tunable spin current in metal/semiconductor/metal structures. IEEE Transactions on Magnetics 46 (6) : 1323-1326. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2010.2045478
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/69147
dc.description.abstractWe theoretically study the spin-dependent transport of conduction electrons across typical metal/semiconductor (SC)/metal structures, where the SC channel exhibits Rashba spin-orbit coupling (SOC) and the metal contacts do not. The spatial discontinuity of the Rashba SOC is shown to result in highly localized, effective magnetic field barriers at the device interfaces. As a result, electrons with oppositely polarized spins along the injection direction are found to be transmitted with different probabilities, resulting in a finite spin polarization. The value of the spin polarization depends sensitively on the Rashba SOC strength within the SC channel, which is well known to be adjustable by an applied gate bias. Thus the proposed structure could be useful as a tunable source of spin-polarized current in spintronic applications. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2010.2045478
dc.sourceScopus
dc.subjectSemiconductor spintronics
dc.subjectSpin injection
dc.subjectSpin-orbit coupling
dc.typeConference Paper
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMAG.2010.2045478
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume46
dc.description.issue6
dc.description.page1323-1326
dc.description.codenIEMGA
dc.identifier.isiut000278037800011
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