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https://scholarbank.nus.edu.sg/handle/10635/68951
DC Field | Value | |
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dc.title | A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor | |
dc.contributor.author | Toh, E.-H. | |
dc.contributor.author | Wang, G.H. | |
dc.contributor.author | Lo, G.-Q. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Benistant, F. | |
dc.contributor.author | Chan, L. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-19T02:55:07Z | |
dc.date.available | 2014-06-19T02:55:07Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Toh, E.-H.,Wang, G.H.,Lo, G.-Q.,Balasubramanian, N.,Tung, C.-H.,Benistant, F.,Chan, L.,Samudra, G.,Yeo, Y.-C. (2005). A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 951-954. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 078039268X | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/68951 | |
dc.description.abstract | This paper reports a novel L-shaped Impact-ionization MOS (LI-MOS) transistor technology that achieves subthreshold swing well below 60 mV/decade at room temperature. First, the LI-MOS transistor is CMOS process compatible, and requires little process modification for integration in a manufacturable process. Second, the LI-MOS structure employs raised source/drain (S/D) regions that enable controllability and scalability of the impact ionization region (I-region). Third, the LI-MOS has superior compactness over previously reported I-MOS device structures. Fourth, the LI-MOS enables the integration of novel materials for band gap and strain engineering to enhance the impact ionization rate in the I-region. Based on the above technology, we demonstrate a record subthreshold swing of 4.5 mV/decade at room temperature for a 100 nm gate length device that incorporates a SiGe I-region. The smallest impact-ionization-based MOS device with a gate length of 60 nm is also demonstrated with a subthreshold swing that is well below 60 mV/decade. © 2005 IEEE. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.volume | 2005 | |
dc.description.page | 951-954 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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