A low voltage dual gate integrated CMOS mixer for 2.4GHZ band applications

Abstract

A new topology for a low voltage dual gate mixer for 2.4GHz band applications was implemented in 0.35 um CMOS technology. With resistive degeneration, and implemented with MOS transistors in the linear region, this topology proves to be suitable for down-converters requiring low voltage and high linearity. With a RF input of 2.4 GHz and an IF output of 100 MHz, the mixer has a voltage conversion gain of 9.48 dB with a 50Ω output load, an input-referred third-order intercept point of +3 dBm, and noise figure of 17.69 dB while requiring -5 dBm of LO power and consuming 4.7 mA from a 2 V supply. Though the mixer design was implemented in 0.35 μm CMOS process in this project, with the device scaling down, the design idea could be implemented in other sub-micron technologies, which could provide good performance with lower supply voltages.