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|Title:||A dual-silicon-nanowire based nanoelectromechanical switch||Authors:||Qian, Y.
|Issue Date:||2013||Citation:||Qian, Y.,Lou, L.,Pott, V.,Tsai, M.J.,Lee, C. (2013). A dual-silicon-nanowire based nanoelectromechanical switch. Proceedings - Winter Simulation Conference : 350-352. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466044||Abstract:||A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon nanowires result to ultra-low pull-in voltage. The pull-in voltage is measured at 0.9V. According to the preliminary results, this switch demonstrates great potential in decreasing pull-in voltage. © 2013 IEEE.||Source Title:||Proceedings - Winter Simulation Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/68788||ISBN:||9781467348416||ISSN:||08917736||DOI:||10.1109/INEC.2013.6466044|
|Appears in Collections:||Staff Publications|
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