Please use this identifier to cite or link to this item: https://doi.org/10.1109/JSTQE.2009.2022959
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dc.titleA 1-V operated MEMS variable optical attenuator using piezoelectric PZT thin-film actuators
dc.contributor.authorLee, C.
dc.contributor.authorHsiao, F.-L.
dc.contributor.authorKobayashi, T.
dc.contributor.authorKoh, K.H.
dc.contributor.authorRamana, P.V.
dc.contributor.authorXiang, W.
dc.contributor.authorYang, B.
dc.contributor.authorTan, C.W.
dc.contributor.authorPinjala, D.
dc.date.accessioned2014-06-19T02:52:18Z
dc.date.available2014-06-19T02:52:18Z
dc.date.issued2009-09
dc.identifier.citationLee, C., Hsiao, F.-L., Kobayashi, T., Koh, K.H., Ramana, P.V., Xiang, W., Yang, B., Tan, C.W., Pinjala, D. (2009-09). A 1-V operated MEMS variable optical attenuator using piezoelectric PZT thin-film actuators. IEEE Journal on Selected Topics in Quantum Electronics 15 (5) : 1529-1536. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2022959
dc.identifier.issn1077260X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/68706
dc.description.abstractA rotational Si mirror driven by PZT actuators has been investigated for variable optical attenuator (VOA) applications. The PZT actuators deploy 3.1-μm PZT layer. The developed PZT-driven microelectromechanical systems VOA comprising a large Si reflection mirror integrated with a dual core fiber collimator in 3-D light attenuation arrangement. The curve of the attenuation versus driving voltage shows rather uniform changing rate taking the advantage of the linear relation between the optical angle and the driving voltage. Dynamic range of 40-50 dB is achieved at 1 and 1.2 dc driving voltages, respectively. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JSTQE.2009.2022959
dc.sourceScopus
dc.subjectMicroelectromechanical systems (MEMS)
dc.subjectMirror
dc.subjectOptical MEMS
dc.subjectPiezoelectric actuator
dc.subjectPZT
dc.subjectVariable optical attenuators (VOAs)
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/JSTQE.2009.2022959
dc.description.sourcetitleIEEE Journal on Selected Topics in Quantum Electronics
dc.description.volume15
dc.description.issue5
dc.description.page1529-1536
dc.description.codenIJSQE
dc.identifier.isiut000270950300034
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