A 0.18-μm CMOS UWB LNA with 5 GHz interference rejection

Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIC.2007.380830

Title:	A 0.18-μm CMOS UWB LNA with 5 GHz interference rejection
Authors:	Gao, Y. Zheng, Y. Ooi, B.-L.
Keywords:	CMOS Low-noise amplifier (LNA) Notch filter Ultrawideband (UWB)
Issue Date:	2007
Citation:	Gao, Y., Zheng, Y., Ooi, B.-L. (2007). A 0.18-μm CMOS UWB LNA with 5 GHz interference rejection. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium : 47-50. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIC.2007.380830
Abstract:	A ultra-wideband low noise amplifier (LNA) with integrated notch filter for interference rejection is designed using 0.18-μm CMOS technology. The three-stage LNA employs a current reuse structure to reduce the power consumption and a serial LC circuit with Q-enhancement circuit to produce band rejection in the 5-6GHz frequency band. The load tank optimization for the current reuse stage is discussed for gain flatness tuning. Measurements show that this LNA has a peak gain of 21.5dB in the low band (3-5GHz) and 15dB in the high band (6-10GHz) while consuming 12mA of current from a 1.8V DC supply. The measured noise figure (NF) and IIP3 are 4.0dB and -18.5 dBm at 3.5GHz, 5.1 dB and -15.5 dBm at 7.2GHz respectively. A 6-12dB gain notch in the 5-6GHz is realized for interference rejection. © 2007 IEEE.
Source Title:	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
URI:	http://scholarbank.nus.edu.sg/handle/10635/68692
ISBN:	1424405319
ISSN:	15292517
DOI:	10.1109/RFIC.2007.380830
Appears in Collections:	Staff Publications

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