Please use this identifier to cite or link to this item:
|Title:||Memory in quantum-dot photoluminescence blinking||Authors:||Stefani, F.D.
|Issue Date:||19-Sep-2005||Citation:||Stefani, F.D., Zhong, X., Knoll, W., Han, M., Kreiter, M. (2005-09-19). Memory in quantum-dot photoluminescence blinking. New Journal of Physics 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/7/1/197||Abstract:||We demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (∼40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.||Source Title:||New Journal of Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/67152||ISSN:||13672630||DOI:||10.1088/1367-2630/7/1/197|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.