Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001475
DC FieldValue
dc.titleThe gate leakage current in graphene field-effect transistor
dc.contributor.authorMao, L.-F.
dc.contributor.authorLi, X.-J.
dc.contributor.authorWang, Z.-O.
dc.contributor.authorWang, J.-Y.
dc.date.accessioned2014-06-17T08:00:26Z
dc.date.available2014-06-17T08:00:26Z
dc.date.issued2008
dc.identifier.citationMao, L.-F., Li, X.-J., Wang, Z.-O., Wang, J.-Y. (2008). The gate leakage current in graphene field-effect transistor. IEEE Electron Device Letters 29 (9) : 1047-1049. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001475
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/65039
dc.description.abstractThe unique band structure of graphene makes the gate leakage current in a graphene field-effect transistor (FET) different from that in silicon FET. Theoretical investigation in this letter demonstrates that the Fowler-Nordheim tunneling current (TC) in a graphene FET is different from that in a silicon FET. Numerical calculations show that a higher oxide electric field results in larger TC in a graphene FET than that in a silicon FET. This implies that, to ensure a workable graphene FET, a thicker gate oxide is needed to limit the gate leakage current compared to that for a silicon FET. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2001475
dc.sourceScopus
dc.subjectDielectric films
dc.subjectGraphene electronics
dc.subjectMetal-oxide-semiconductor field-effect transistors (MOSFETs)
dc.subjectTunneling
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1109/LED.2008.2001475
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue9
dc.description.page1047-1049
dc.description.codenEDLED
dc.identifier.isiut000259573400024
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

22
checked on Jan 21, 2022

WEB OF SCIENCETM
Citations

21
checked on Jan 21, 2022

Page view(s)

118
checked on Jan 20, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.