Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3324696
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dc.titlePolymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices
dc.contributor.authorOuyang, J.
dc.contributor.authorYang, Y.
dc.date.accessioned2014-06-17T07:59:43Z
dc.date.available2014-06-17T07:59:43Z
dc.date.issued2010
dc.identifier.citationOuyang, J., Yang, Y. (2010). Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices. Applied Physics Letters 96 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3324696
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64980
dc.description.abstractDevices with a polystyrene film blended with gold nanoparticles capped with conjugated 2-naphthalenethiol exhibited electrode-sensitive bipolar resistive switchings. The resistances of the two states could be different by almost three orders of magnitude, and the devices could be switched between the two states for numerous times. Thus, these devices can be used as nonvolatile memory devices. The resistive switching voltage is related to the work function of the electrode. The electrode sensitivity of the resistive switchings is attributed to the contact potential at the contact of gold nanoparticles and electrode arising from charge transfer between them. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3324696
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3324696
dc.description.sourcetitleApplied Physics Letters
dc.description.volume96
dc.description.issue6
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000274516900076
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