Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3056585
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dc.titleMechanism of room temperature ferromagnetism in ZnO doped with Al
dc.contributor.authorMa, Y.W.
dc.contributor.authorDing, J.
dc.contributor.authorYi, J.B.
dc.contributor.authorZhang, H.T.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-06-17T07:59:17Z
dc.date.available2014-06-17T07:59:17Z
dc.date.issued2009
dc.identifier.citationMa, Y.W., Ding, J., Yi, J.B., Zhang, H.T., Ng, C.M. (2009). Mechanism of room temperature ferromagnetism in ZnO doped with Al. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3056585
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64942
dc.description.abstractZnO recently receives extensive interest owing to its potential applications in the dilute magnetic semiconductor. In this work, Al was deposited onto the surface of ZnO film followed by high vacuum annealing. The film showed the room temperature ferromagnetism (RTF). The saturation magnetization (Ms) highly depends on both the thickness of the Al top layer and the thickness of the ZnO film. The RTF disappeared when the film was further annealed in air atmosphere. The detailed structure characterizations (x-ray diffraction and x-ray photoelectron spectroscopy) revealed that the RTF was associated with a charge transfer between Al and Zn. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3056585
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3056585
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume105
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000266633500430
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