Please use this identifier to cite or link to this item: https://doi.org/10.1073/pnas.0807476105
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dc.titleMaterials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations
dc.contributor.authorKim, D.-H.
dc.contributor.authorSong, J.
dc.contributor.authorWon, M.C.
dc.contributor.authorKim, H.-S.
dc.contributor.authorKim, R.-H.
dc.contributor.authorLiu, Z.
dc.contributor.authorHuang, Y.Y.
dc.contributor.authorHwang, K.-C.
dc.contributor.authorZhang, Y.-W.
dc.contributor.authorRogers, J.A.
dc.date.accessioned2014-06-17T07:59:14Z
dc.date.available2014-06-17T07:59:14Z
dc.date.issued2008-12-02
dc.identifier.citationKim, D.-H., Song, J., Won, M.C., Kim, H.-S., Kim, R.-H., Liu, Z., Huang, Y.Y., Hwang, K.-C., Zhang, Y.-W., Rogers, J.A. (2008-12-02). Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations. Proceedings of the National Academy of Sciences of the United States of America 105 (48) : 18675-18680. ScholarBank@NUS Repository. https://doi.org/10.1073/pnas.0807476105
dc.identifier.issn00278424
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64939
dc.description.abstractElectronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enablenewbiomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. © 2008 by The National Academy of Sciences of the USA.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1073/pnas.0807476105
dc.sourceScopus
dc.subjectBuckling mechanics
dc.subjectFlexible electronics
dc.subjectPlastic electronics
dc.subjectSemiconductor nanomaterials
dc.subjectStretchable electronics
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1073/pnas.0807476105
dc.description.sourcetitleProceedings of the National Academy of Sciences of the United States of America
dc.description.volume105
dc.description.issue48
dc.description.page18675-18680
dc.description.codenPNASA
dc.identifier.isiut000261489100014
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