Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.104.137201
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dc.titleFerromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
dc.contributor.authorYi, J.B.
dc.contributor.authorLim, C.C.
dc.contributor.authorXing, G.Z.
dc.contributor.authorFan, H.M.
dc.contributor.authorVan, L.H.
dc.contributor.authorHuang, S.L.
dc.contributor.authorYang, K.S.
dc.contributor.authorHuang, X.L.
dc.contributor.authorQin, X.B.
dc.contributor.authorWang, B.Y.
dc.contributor.authorWu, T.
dc.contributor.authorWang, L.
dc.contributor.authorZhang, H.T.
dc.contributor.authorGao, X.Y.
dc.contributor.authorLiu, T.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorDing, J.
dc.date.accessioned2014-06-17T07:58:35Z
dc.date.available2014-06-17T07:58:35Z
dc.date.issued2010-03-29
dc.identifier.citationYi, J.B., Lim, C.C., Xing, G.Z., Fan, H.M., Van, L.H., Huang, S.L., Yang, K.S., Huang, X.L., Qin, X.B., Wang, B.Y., Wu, T., Wang, L., Zhang, H.T., Gao, X.Y., Liu, T., Wee, A.T.S., Feng, Y.P., Ding, J. (2010-03-29). Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO. Physical Review Letters 104 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.104.137201
dc.identifier.issn00319007
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64881
dc.description.abstractWe demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure. © 2010 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevLett.104.137201
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.doi10.1103/PhysRevLett.104.137201
dc.description.sourcetitlePhysical Review Letters
dc.description.volume104
dc.description.issue13
dc.description.page-
dc.description.codenPRLTA
dc.identifier.isiut000276260800041
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