Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2822472
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dc.titleFerroelectric and dielectric behavior of heterolayered PZT thin films
dc.contributor.authorKartawidjaja, F.C.
dc.contributor.authorSim, C.H.
dc.contributor.authorWang, J.
dc.date.accessioned2014-06-17T07:58:33Z
dc.date.available2014-06-17T07:58:33Z
dc.date.issued2007
dc.identifier.citationKartawidjaja, F.C., Sim, C.H., Wang, J. (2007). Ferroelectric and dielectric behavior of heterolayered PZT thin films. Journal of Applied Physics 102 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2822472
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/64879
dc.description.abstractHeterolayered Pb (Zr1-x Tix) O3 thin films consisting of different numbers of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers are studied. They exhibit (001) (100) preferred orientation and dense microstructure when baked at 500 °C and then thermally annealed at 650 °C. They demonstrate a considerably low leakage current density in the order of 10-7 A cm2. Their ferroelectric and dielectric properties are improved with increasing number of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers, thereby the six-heterolayered PZT thin film shows a much enhanced remanent polarization of 41.3 μC cm2 and relative permittivity of 710 at 1 kHz. In fatigue test, a wake-up phenomenon is observed with the heterolayered films, where the degradation in switchable polarization is delayed. At elevated temperatures, the wake-up phenomenon was reduced, leading to fatigue degradation at a relatively lower number of switching cycles. The phenomenon is related to the injected electron causing oxygen vacancies, the accumulation of which impedes the domain switching. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2822472
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.2822472
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume102
dc.description.issue12
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000251987600056
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