Please use this identifier to cite or link to this item:
Title: Electrochemical anodization of silicon-on-insulator wafers using an AC
Authors: Breese, M.B.H. 
Azimi, S.
Ow, Y.S. 
Mangaiyarkarasi, D. 
Chan, T.K. 
Jiao, S.
Dang, Z.Y.
Blackwood, D.J. 
Issue Date: 2010
Citation: Breese, M.B.H., Azimi, S., Ow, Y.S., Mangaiyarkarasi, D., Chan, T.K., Jiao, S., Dang, Z.Y., Blackwood, D.J. (2010). Electrochemical anodization of silicon-on-insulator wafers using an AC. Electrochemical and Solid-State Letters 13 (8) : H271-H273. ScholarBank@NUS Repository.
Abstract: Electrochemical anodization of bulk silicon has applications in many micromachining processes. However, its use for silicon photonics is limited because silicon-on-insulator (SOI) wafers cannot be anodized using a conventional process because of the buried oxide. We overcome this using an alternating potential to induce an ac across an SOI wafer, treating it as a capacitative structure. The resultant surface roughness is comparable to that obtained using conventional anodization, and uniform etching across a 6 mm exposed surface is obtained with a minimum patterned linewidth of 2.5 μm in the device layer. © 2010 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
ISSN: 10990062
DOI: 10.1149/1.3431038
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jun 23, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.