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|Title:||A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio||Authors:||Zong, B.Y.
|Issue Date:||Mar-2013||Citation:||Zong, B.Y., Ho, P., Han, G.C., Chow, G.M., Chen, J.S. (2013-03). A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio. Journal of Micromechanics and Microengineering 23 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/23/3/035038||Abstract:||A simple methodology to prepare sub-100 nm resist nanopatterns with a high aspect ratio for the transfer of device nanofeatures is demonstrated. The novel method is based on a two- or multi-step developing process with the incorporation of an ∼4 nm thick metal film to protect the fine resist nanopatterns in the developer solution. Using this approach, sub-100 nm resist nanopatterns of different shapes were readily fabricated using the positive- and negative-tone electron-beam resists. Subsequently, fine device nanostructures could be readily converted from these fine resist nanopatterns with a high aspect ratio. © 2013 IOP Publishing Ltd.||Source Title:||Journal of Micromechanics and Microengineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/64802||ISSN:||09601317||DOI:||10.1088/0960-1317/23/3/035038|
|Appears in Collections:||Staff Publications|
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