Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2780080
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dc.titleDefect engineering by surface chemical state in boron-doped preamorphized silicon
dc.contributor.authorYeong, S.H.
dc.contributor.authorSrinivasan, M.P.
dc.contributor.authorColombeau, B.
dc.contributor.authorChan, L.
dc.contributor.authorAkkipeddi, R.
dc.contributor.authorKwok, C.T.M.
dc.contributor.authorVaidyanathan, R.
dc.contributor.authorSeebauer, E.G.
dc.date.accessioned2014-06-17T07:38:26Z
dc.date.available2014-06-17T07:38:26Z
dc.date.issued2007
dc.identifier.citationYeong, S.H., Srinivasan, M.P., Colombeau, B., Chan, L., Akkipeddi, R., Kwok, C.T.M., Vaidyanathan, R., Seebauer, E.G. (2007). Defect engineering by surface chemical state in boron-doped preamorphized silicon. Applied Physics Letters 91 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2780080
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/63693
dc.description.abstractThe continual downscaling of silicon devices for integrated circuits requires the formation of pn junctions that are progressively shallower, incorporate increasing levels of electrically active dopant, and sustain minimal implantation damage. In the case of boron implanted into preamorphized Si, the authors show that all these goals can be accomplished simultaneously through the use of an atomically clean surface, which during annealing acts as a large sink that removes Si interstitials selectively over dopant interstitials. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2780080
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1063/1.2780080
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue10
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000249322900033
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