Unconnected junction contrast in ion beam induced charge microscopy

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.116390

Title:	Unconnected junction contrast in ion beam induced charge microscopy
Authors:	Kolachina, S. Ong, V.K.S. Chan, D.S.H. Phang, J.C.H. Osipowicz, T. Watt, F.
Issue Date:	1996
Citation:	Kolachina, S., Ong, V.K.S., Chan, D.S.H., Phang, J.C.H., Osipowicz, T., Watt, F. (1996). Unconnected junction contrast in ion beam induced charge microscopy. Applied Physics Letters 68 (4) : 532-534. ScholarBank@NUS Repository. https://doi.org/10.1063/1.116390
Abstract:	A new contrast mechanism in ion beam induced charge imaging in semiconductors is reported. Junctions not directly connected to the charge collection preamplifier were found to give rise to significant charge collection signals. Imaging with these signals is carried out, thus enabling the mapping of junctions not directly connected to the charge collection amplifier. © 1996 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/62909
ISSN:	00036951
DOI:	10.1063/1.116390
Appears in Collections:	Staff Publications

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