Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62849

Title:	Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
Authors:	Xu, S.J. Liu, J. Zheng, H.Z. Chua, S.J. Li, Y.X. Cheng, W.C. Zhang, P.H. Yang, X.P.
Issue Date:	11-Mar-1996
Citation:	Xu, S.J.,Liu, J.,Zheng, H.Z.,Chua, S.J.,Li, Y.X.,Cheng, W.C.,Zhang, P.H.,Yang, X.P. (1996-03-11). Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case. Physics Letters, Section A: General, Atomic and Solid State Physics 212 (1-2) : 97-102. ScholarBank@NUS Repository.
Abstract:	Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within ± 10 mV and a negative differential velocity effect at a bias of about ± 40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.
Source Title:	Physics Letters, Section A: General, Atomic and Solid State Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/62849
ISSN:	03759601
Appears in Collections:	Staff Publications

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