Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62849
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dc.titleTemperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
dc.contributor.authorXu, S.J.
dc.contributor.authorLiu, J.
dc.contributor.authorZheng, H.Z.
dc.contributor.authorChua, S.J.
dc.contributor.authorLi, Y.X.
dc.contributor.authorCheng, W.C.
dc.contributor.authorZhang, P.H.
dc.contributor.authorYang, X.P.
dc.date.accessioned2014-06-17T06:55:34Z
dc.date.available2014-06-17T06:55:34Z
dc.date.issued1996-03-11
dc.identifier.citationXu, S.J.,Liu, J.,Zheng, H.Z.,Chua, S.J.,Li, Y.X.,Cheng, W.C.,Zhang, P.H.,Yang, X.P. (1996-03-11). Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case. Physics Letters, Section A: General, Atomic and Solid State Physics 212 (1-2) : 97-102. ScholarBank@NUS Repository.
dc.identifier.issn03759601
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62849
dc.description.abstractPerpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within ± 10 mV and a negative differential velocity effect at a bias of about ± 40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitlePhysics Letters, Section A: General, Atomic and Solid State Physics
dc.description.volume212
dc.description.issue1-2
dc.description.page97-102
dc.description.codenPYLAA
dc.identifier.isiutNOT_IN_WOS
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