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dc.titleSubband current in resonant tunneling diode
dc.contributor.authorSheng, H.
dc.contributor.authorSinkkonen, J.
dc.identifier.citationSheng, H.,Sinkkonen, J. (1992). Subband current in resonant tunneling diode. Superlattices and Microstructures 12 (4) : 453-457. ScholarBank@NUS Repository.
dc.description.abstractAn accumulation layer is formed on the emitter side of a biased resonant tunneling diode (RTD) leading to a similar subband structure as in the ordinary MOS-system. Electrons occupying the subbands can tunnel through the RTD-structure and give rise to a significant contribution to the diode current. We calculate the subband current from our semiclassical transport model developed earlier for the ordinary tunneling current. The model includes quantum interference and bulk scattering by utilizing an optical approximation for the coherent part of the wave function. The subband current turns out to be of the same order of magnitude as the ordinary tunneling current component. It is shifted to higher voltages and therefore it increases the valley current. In order to reduce the subband current and improve the peak-to-valley current ratio (PVCR), we propose a novel RTD-structure with a grading in front of the emitter barrier. The purpose of the grading is to suppress the formation of the accumulation layer and thereby decrease the valley current. Calculations show that PVCR increases by a factor of two using a proper design of the grading. © 1992.
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSuperlattices and Microstructures
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