Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62817
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dc.titleStress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
dc.contributor.authorLim, P.S.
dc.contributor.authorChim, W.K.
dc.date.accessioned2014-06-17T06:55:10Z
dc.date.available2014-06-17T06:55:10Z
dc.date.issued1999
dc.identifier.citationLim, P.S.,Chim, W.K. (1999). Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (4 B) : 2652-2655. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62817
dc.description.abstractHigh-field stressing of gate oxides can lead to an increase in the stress-induced leakage current (SILC), which could impose a potential scaling limitation for tunnel oxide applications in nonvolatile semiconductor memories. In this article, we report on positive lateral nonuniform (LNU) charge generation and hole trapping in silicon dioxide subjected to negative-gate-voltage, high-field impulse stressing, and the correlation of the LNU charge to the SILC. The LNU charge and SILC can be electrically annealed through repeated measurements of the gate current density vs gate voltage characteristics, or using either a constant voltage or constant current stress step. Electrical annealing studies show that the positive LNU charge is located close to the oxide-silicon interface and is distributed with a certain minimum energy level. A critical fluence or gate voltage has to be applied before significant LNU charge annealing is observed. © 1999 Publication Board, Japanese Journal of Applied Physics.
dc.sourceScopus
dc.subjectC-V measurement
dc.subjectElectrical annealing
dc.subjectElectrostatic discharge
dc.subjectHole trap
dc.subjectLateral nonuniform charge
dc.subjectMOS capacitor
dc.subjectOxide reliability
dc.subjectStress-induced leakage current
dc.subjectTransmission line pulsing
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume38
dc.description.issue4 B
dc.description.page2652-2655
dc.description.codenJAPLD
dc.identifier.isiutNOT_IN_WOS
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