Please use this identifier to cite or link to this item:
|Title:||SIMULATION OF INHOMOGENEOUS BROADENING AND MODE-BEATING EFFECTS IN SEMICONDUCTOR LASERS.||Authors:||Chua, S.J.
|Issue Date:||Aug-1988||Citation:||Chua, S.J.,Loh, W.H. (1988-08). SIMULATION OF INHOMOGENEOUS BROADENING AND MODE-BEATING EFFECTS IN SEMICONDUCTOR LASERS.. IEE proceedings. Part J, Optoelectronics 135 (4) : 310-317. ScholarBank@NUS Repository.||Abstract:||A model is proposed in which the conduction band is discretised into energy intervals corresponding to longitudinal-mode separations for the simulation of inhomogeneous broadening and mode beating effects in semiconductor lasers. Four first-order relaxation processes are proposed to take account of intraband relaxations, and mode beating is included as a separate nonlinear gain term in the rate equations. In addition to the usual results of spectral-hole burning, single longitudinal-mode stabilisation and increased damping of relaxation oscillations, the model also accounts for the excitation of nonadjacent longitudinal modes experimentally observed at high bias in narrow planar-stripe lasers and the temperature dependence of spectral behaviour in CSP lasers.||Source Title:||IEE proceedings. Part J, Optoelectronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62771||ISSN:||02673932|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 19, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.