Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.223700
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dc.titleSemiconductor parameters extraction using cathodoluminescence in the scanning electron microscope
dc.contributor.authorChan, Daniel S.H.
dc.contributor.authorPey, Kin Leong
dc.contributor.authorPhang, Jacob C.H.
dc.date.accessioned2014-06-17T06:54:28Z
dc.date.available2014-06-17T06:54:28Z
dc.date.issued1993-08
dc.identifier.citationChan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62752
dc.description.abstractFive semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.223700
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.doi10.1109/16.223700
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume40
dc.description.issue8
dc.description.page1417-1425
dc.description.codenIETDA
dc.identifier.isiutA1993LN72600009
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