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|Title:||Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope||Authors:||Chan, Daniel S.H.
Pey, Kin Leong
Phang, Jacob C.H.
|Issue Date:||Aug-1993||Citation:||Chan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700||Abstract:||Five semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/62752||ISSN:||00189383||DOI:||10.1109/16.223700|
|Appears in Collections:||Staff Publications|
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