Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.223700
Title: Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope
Authors: Chan, Daniel S.H. 
Pey, Kin Leong 
Phang, Jacob C.H. 
Issue Date: Aug-1993
Citation: Chan, Daniel S.H., Pey, Kin Leong, Phang, Jacob C.H. (1993-08). Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope. IEEE Transactions on Electron Devices 40 (8) : 1417-1425. ScholarBank@NUS Repository. https://doi.org/10.1109/16.223700
Abstract: Five semiconductor-related parameters have been extracted simultaneously from experimental data of cathodoluminescence output collected as a function of electron-beam energy. The extraction technique is based on a recently proposed three-dimensional computer model of cathodoluminescence. It also uses a curve fitting technique based on the minimization of an area error criterion. Computational results show that a unique and unambiguous set of parameter values can be obtained for each set of the experimental data points using the algorithm suggested.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/62752
ISSN: 00189383
DOI: 10.1109/16.223700
Appears in Collections:Staff Publications

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